Middle of line cobalt interconnection
US9741609B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Nov 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating features of a semiconductor device includes forming a contact over a substrate, the contact including a cobalt core and a liner layer arranged on sidewalls, wherein the contact includes a portion that is laterally surrounded by an interlevel dielectric (ILD); depositing another layer of ILD on the contact; etching a first opening in the ILD to expose a surface of the contact; removing the liner layer of the contact to expose a portion of the cobalt core; etching the ILD that laterally surrounds the contact to form a second opening beneath the first opening, the second opening having a width that is less than the first opening; depositing a liner on sidewalls of the first opening, the second opening, and directly on the cobalt core; and depositing a metal on the liner layer to form an interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.