TSV deep trench capacitor and anti-fuse structure
US9741657B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2014 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Mar 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A through-silicon-via (TSV) structure is formed within a trench located within a semiconductor structure. The TSV structure may include a first electrically conductive liner layer located on an outer surface of the trench and a first electrically conductive structure located on the first electrically conductive liner layer, whereby the first electrically conductive structure partially fills the trench. A second electrically conductive liner layer is located on the first electrically conductive structure, a dielectric layer is located on the second electrically conductive liner layer, while a third electrically conductive liner layer is located on the dielectric layer. A second electrically conductive structure is located on the third electrically conductive liner layer, whereby the second electrically conductive structure fills a remaining opening of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.