FinFETs with controllable and adjustable channel doping
US9741717B1 · kind B1 · utility
14Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Oct 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming features of a finFET structure includes forming fins on a surface of a substrate. A first liner is formed around each fin and a shallow trench isolation region is formed around each fin. A dopant layer is implanted in each fin. A portion of the shallow trench isolation region is etched from each fin. A first portion of the structure is blocked and the first liner replaced with a second liner in a second portion of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.