Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
US9748113B2 · kind B2 · utility
0Cited by
16References
30Claims
0Family size
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Key dates
| Filing date | Jul 30, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Sep 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.