Method for evaluating semiconductor substrate
US9748151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Feb 23, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/6116
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a method for evaluating a semiconductor substrate subjected to a defect recovery heat treatment to recover a crystal defect in the semiconductor substrate having the crystal defect, flash lamp annealing is performed as the defect recovery heat treatment, and the method includes steps of measuring the crystal defect in the semiconductor substrate, which is being recovered, by controlling treatment conditions for the flash lamp annealing and analyzing a recovery mechanism of the crystal defect on the basis of a result of the measurement. Consequently, the method for evaluating a semiconductor substrate which enables evaluating a recovery process of the crystal defect is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.