Method for manufacturing a single-crystal 4H—SiC substrate
US9752254B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jun 15, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Jun 15, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a single-crystal 4H—SiC substrate includes preparing a 4H—SiC bulk single-crystal substrate having a flat surface, and growing an epitaxial first single-crystal 4H—SiC layer having recesses on the 4H—SiC bulk single-crystal substrate to a thickness X, measured in micrometers (μm). The recesses have a diameter Y, measured in micrometers, no smaller than 0.2*X and no larger than 2*X. In addition, the recesses have a depth Z, when measured in micrometers, no smaller than (0.95*X+0.5*10−3), and no larger than 10*X*10−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.