Method for treating a semiconductor wafer

US9754787B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Stephan Voss · Munich, DE
• Alexander Breymesser · Villach, AT
• Alexander Susiti · Bad Bleiberg, AT
• Shuhai Liu · Beijing, CN
• Helmut Oefner · Zorneding, DE

Key dates

• Filing date: Jun 24, 2014
• Grant date: Sep 5, 2017
• Expiry date: Dec 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8603
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.