Method for manufacturing semiconductor device
US9754793B2 · kind B2 · utility
5Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Dec 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.