Semiconductor device and method comprising redistribution layers
US9754835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Oct 12, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor package can include placing a single layer dielectric film on a temporary carrier substrate. A plurality of semiconductor die can be placed directly on the first surface of the single layer dielectric film. The single layer dielectric film can be cured to lock the plurality of semiconductor die in place on the single layer dielectric film. The plurality of semiconductor die can be encapsulated while directly on the single layer dielectric film with an encapsulant. The single layer dielectric film can be patterned utilizing a mask-less patterning technique to form a via hole after removing the temporary carrier substrate. A conductive layer can be formed directly on, substantially parallel to, and extending across, the second surface of the patterned single layer dielectric film, within the vial hole, and over the plurality of semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.