Surface devices within a vertical power device
US9755058B2 · kind B2 · utility
2Cited by
2References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.