Silicon film forming method, thin film forming method and cross-sectional shape control method
US9758865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2014 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Aug 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.