Plasma suppression behind a showerhead through the use of increased pressure
US9758868B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Mar 10, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45565
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.