PECVD protective layers for semiconductor devices
US9761439B2 · kind B2 · utility
2Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2014 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Dec 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plasma-enhanced chemical vapor deposition (PECVD) protective layer configured to prevent failure of the semiconductor device throughout a temperature humidity with bias (THB) test exceeding about 1000 hours and/or a highly accelerated stress test (HAST) exceeding about 96 hours. Including a PECVD protective layer capable of protecting the semiconductor device throughout a THB test exceeding about 1000 hours and/or a HAST exceeding about 96 hours results in an extremely robust device, while providing the protective layer via PECVD results in convenience and cost savings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.