Semiconductor memory device that applies an initial pass voltage followed by a final pass voltage to non-selected word lines during a write operation
US9767908B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device includes a first memory cell above a substrate and electrically connected to a first word line, a second memory cell above the first memory cell and electrically connected to a second word line, and a controller. The controller is configured to execute a write operation that includes a first step in which a first voltage is applied to a selected word line and to a non-selected word line, a second step after the first step in which a program voltage is applied to the selected word line, and a third step after the second step in which a second voltage higher than the first voltage is applied to the non-selected word line. A time period between a start of the second step and a start of the third step is different depending on whether the first or second memory cell is being written.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.