Methods and apparatus for three-dimensional nonvolatile memory

US9768180B1 · kind B1 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Guangle Zhou · Fremont, US
• Yubao Li · Beijing, CN
• Yangyin Chen · Leuven, BE
• Tanmay Kumar · Pleasanton, US

Key dates

• Filing date: Oct 29, 2016
• Grant date: Sep 19, 2017
• Expiry date: Oct 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/27

Abstract

A method is provided that includes forming a dielectric material above a substrate, forming a hole in the dielectric material, the hole disposed in a first direction, forming a word line layer above the substrate via the hole, the word line layer disposed in a second direction perpendicular to the first direction, the word line layer including a first conductive material having a first work function, forming a nonvolatile memory material on a sidewall of the hole, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, forming a local bit line in the hole, the local bit line including a second conductive material having a second work function, wherein the first work function is greater than the second work function, and forming a memory cell comprising the nonvolatile memory material at an intersection of the local bit line and the word line layer.