Method of selectively depositing floating gate material in a memory device
US9768270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Undesirable metal contamination from a selective metal deposition process can be minimized or eliminated by employing a first material layer on a bevel and a back side of a substrate, while providing a second material layer only on a front side of the substrate. The first material layer and the second material layer are selected such that a selective deposition process of a metal material provides a metal material portion only on the second material layer, while no deposition occurs on the first material layer or isolated islands of the metal material are formed on the first material layer. Any residual metal material can be removed from the bevel and the back side by a wet etch to reduce or prevent metal contamination from the deposited metal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.