Integrated structures and methods of forming integrated structures

US9773805B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Jie Li · Lo Wu, CN
• James Mathew · Boise, US
• Kunal Shrotri · Boise, US
• Luan C. Tran · Meridian, US
• Gordon A. Haller · Boise, US
• Yangda Zhang · Singapore, SG
• Hongpeng Yu · Nanhu, CN
• Minsoo Lee · Seoul, KR

Key dates

• Filing date: Jun 20, 2016
• Grant date: Sep 26, 2017
• Expiry date: Jun 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.