Semiconductor device and method for fabricating the same
US9773887B2 · kind B2 · utility
2Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2015 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Dec 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon, a first spacer around the gate structure, and a contact etch stop layer (CESL) adjacent to the first spacer; forming a cap layer on the gate structure, the first spacer, and the CESL; and removing part of the cap layer for forming a second spacer adjacent to the CESL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.