Fabrication method of a stack of electronic devices

US9779982B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Perrine Batude · Dijon, FR
• Laurent Brunet · Léguevin, FR
• Claire Fenouillet-Beranger · Grenoble, FR
• Frank Fournel · Meylan, FR

Key dates

• Filing date: Dec 22, 2016
• Grant date: Oct 3, 2017
• Expiry date: Dec 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/01
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device, a dielectric layer, and a first semiconductor layer; b) providing a second structure successively including a substrate, an active layer, a dielectric layer, and a second semiconductor layer, the active layer being designed to form an electronic device; c) bonding the first and second structures by direct bonding between the first and second semiconductor layers so as to form a bonding interface; d) removing the substrate of the second structure so as to expose the active layer; e) introducing dopants into the first and second semiconductor layers so as to form a ground plane.