Three-dimensional memory device containing annular etch-stop spacer and method of making thereof
US9780034B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jun 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a monolithic three-dimensional memory device includes forming a first alternating stack over a substrate, forming an insulating cap layer, forming a first memory opening through the insulating cap layer and the first alternating stack, forming a sacrificial pillar structure in the first memory opening, forming a second alternating stack, forming a second memory opening, forming an inter-stack memory opening, forming a memory film and a first semiconductor channel layer in the inter-stack memory opening, anisotropically etching a horizontal bottom portion of the memory film and the first semiconductor channel layer to expose the substrate at the bottom of the inter-stack memory opening such that damage to portions of the first semiconductor channel layer and the memory film located adjacent to the insulating cap layer is reduced or avoided, and forming a second semiconductor channel layer in contact with the exposed substrate in the inter-stack memory opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.