Semiconductor device and method for manufacturing the same
US9780111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2015 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Aug 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
Abstract
According to one embodiment, a semiconductor device includes a substrate, a stacked body, a film having semi-conductivity or conductivity, and a memory film. The stacked body includes a plurality of metal layers, a plurality of insulating layers, and a plurality of intermediate layers stacked on a major surface of the substrate. The film extends in the stacked body in a stacking direction of the stacked body. The memory film is provided between the film and the metal layers. The metal layers are tungsten layers and the intermediate layers are tungsten nitride layers. Or the metal layers are molybdenum layers and the intermediate layers are molybdenum nitride layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.