Bottom-up epitaxy growth on air-gap buffer
US9780218B1 · kind B1 · utility
5Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | May 2, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.