Cell-specific reference generation and sensing
US9786347B1 · kind B1 · utility
14Cited by
0References
19Claims
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Assignee
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Key dates
| Filing date | Mar 16, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Mar 16, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2293
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A portion of charge of a memory cell may be captured and, for example, stored using a capacitor or intrinsic capacitance of the memory array that includes the memory cell. The memory cell may be recharged (e.g., re-written). The memory cell may then be read, and a voltage of the memory cell may be compared to a voltage resulting from the captured charge. A logic state of the memory cell may be determined based at least in part on the voltage comparison.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.