Transistor with bypassed gate structure field
US9786660B1 · kind B1 · utility
21Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Mar 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor device includes a source contact extending in a first direction, a gate finger extending in the first direction adjacent the source contact, and a drain contact adjacent the gate finger, wherein the gate finger is between the drain contact and the source contact. The device further includes a gate jumper extending in the first direction, a gate bus connected to the gate jumper and the gate finger, and a gate signal distribution bar that is spaced apart from the gate bus in the first direction and that connects the gate jumper to the gate finger.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.