Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuit
US9786755B2 · kind B2 · utility
2Cited by
2References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 2, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Nov 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
Abstract
An integrated circuit includes a first zone for a first transistor and a second zone for a second transistor. The transistors are supported by a substrate of the silicon-on-insulator type that includes a semiconductor film on a buried insulating layer on a carrier substrate. In the second zone, the semiconductor film has been removed. The second transistor in the second zone includes a gate-dielectric region resting on the carrier substrate that is formed by a portion of the buried insulating layer). The first transistor in the first zone includes a gate-dielectric region formed by a dielectric layer on the semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.