Patent · US Active

Multibit self-reference thermally assisted MRAM

US9786836B2 · kind B2 · utility

0Cited by

1References

10Claims

0Family size

Assignees

International Business Machines Corporation · US
CROCUS TECHNOLOGY SA · FR

Inventors

Anthony J. Annunziata · Stamford, US
Lucian Prejbeanu · Grenoble, FR
Philip L. Trouilloud · Norwood, US
Daniel C. Worledge · Somers, US

Key dates

Filing date	Oct 20, 2015
Grant date	Oct 10, 2017
Priority date	—
Expiry date	Oct 20, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/10
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.