Ferroelectric memory cell sensing
US9792973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2275
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A memory device may maintain a digit line voltage at a ground reference for a duration associated with biasing a ferroelectric capacitor of a memory cell. For example, a digit line that is in electronic communication with a ferroelectric capacitor may be virtually grounded while a voltage is applied to a plate of the ferroelectric capacitor, and the ferroelectric capacitor may be isolated from the virtual ground after a threshold associated with applying the voltage to the plate is reached. A switching component (e.g., a transistor) that is in electronic communication with the digit line and virtual ground may be activated to virtually ground the digit line and deactivated to isolate the digit line from virtual ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.