Fabricating method of fin field effect transistor (FinFET)
US9793105B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Aug 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a fabricating method of a FinFET, comprising: providing a substrate having fin structures; depositing an dielectric layer on the substrate filling between the fin structures; forming recesses to reveal a portion of the fin structure by removing a portion of the dielectric layer; performing a cleaning process on using a cleaning solution selected from one of a first solution, consisting of dHF and H2O2, and a second solution, consisting of dHF and DIO3; forming a gate structure across on the fin structures; and forming a source/drain structure on the substrate at two lateral sides of the gate structure. The present invention also provides a fabricating method of a FinFET having an improved cleaning step using a cleaning solution having one of a third solution, consisting of dHF and DIO3, and a fourth solution, consisting of NH4OH and DIO3 before formation of the source/drain structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.