Interconnect integration for sidewall pore seal and via cleanliness

US9793108B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• He Ren · San Jose, US
• Mehul Naik · San Jose, US
• Deenesh Padhi · Sunnyvale, US
• Priyanka DASH · Menlo Park, US
• Bhaskar Kumar · Santa Clara, US
• Alexandros T. Demos · Fremont, US

Key dates

• Filing date: Jun 25, 2015
• Grant date: Oct 17, 2017
• Expiry date: Jun 25, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76831
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.