Etch mask for hybrid laser scribing and plasma etch wafer singulation process

US9793132B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Wenguang Li · Los Gatos, US
• James S. Papanu · San Rafael, US
• Ramesh Krishnamurthy · Sunnyvale, US
• Prabhat Kumar · Framingham, US
• Brad Eaton · Menlo Park, US
• Ajay Kumar · Fairport, US
• Alexander Lerner · Carmiel, IL

Key dates

• Filing date: May 13, 2016
• Grant date: Oct 17, 2017
• Expiry date: May 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/78
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Etch masks and methods of dicing semiconductor wafers are described. In an example, an etch mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. The etch mask also includes a plurality of particles dispersed throughout the water-soluble matrix. The plurality of particles has an average diameter approximately in the range of 5-100 nanometers. A ratio of weight % of the solid component to weight % of the plurality of particles is approximately in the range of 1:0.1-1:4.