Methods for forming mask layers using a flowable carbon-containing silicon dioxide material
US9793169B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jun 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One method disclosed herein includes, among other things, forming a process layer on a substrate, forming a carbon-containing silicon dioxide layer above the process layer and forming a patterned mask layer above the carbon-containing silicon dioxide layer. The patterned mask layer exposes portions of the carbon-containing silicon dioxide layer. A material modification process is performed on the exposed portions of the carbon-containing silicon dioxide layer to generate modified portions, and the modified portions are removed. The process layer is etched using remaining portions of the carbon-containing silicon dioxide layer as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.