Heterogeneous metallization using solid diffusion removal of metal interconnects

US9793206B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Benjamin D. Briggs · Cohoes, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Bartlet H. DeProspo · Middletown, US
• Huai Huang · Clifton Park, US
• Christopher J. Penny · Saratoga Springs, US
• Michael Rizzolo · Delmar, US

Key dates

• Filing date: Sep 29, 2016
• Grant date: Oct 17, 2017
• Expiry date: Sep 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53257
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming trenches of an interconnect network in a substrate. The method includes forming a first trench in the substrate, which has a first width. The method also includes forming a second trench in the substrate, which has a second width that is greater than the first width. The method also includes depositing a metal layer into the trenches, applying a dielectric over the metal, and diffusing metal atoms from the trenches to the dielectric. The dielectric absorbs a majority of the metal atoms from the first trench while simultaneously absorbing only a minority of metal atoms from the second trench.