Semiconductor workpiece with selective backside metallization
US9793239B2 · kind B2 · utility
1Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2015 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Sep 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06589
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various semiconductor workpieces with selective backside metallizations and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor workpiece that has multiple dies. A backside metallization is fabricated on a first die of the dies but not on a second die of the dies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.