Multi-layer fin field effect transistor devices and methods of forming the same
US9793403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
Abstract
Multi-layer fin field effect transistor devices and methods of forming the same are provided. The devices may include a fin shaped channel structure on a substrate. The channel structure may include stressor layers stacked on the substrate and a channel layer between the stressor layers, and the stressor layers may include a semiconductor material having a wide bandgap that is sufficient to confine carriers to the channel layer and having a lattice constant different from a lattice constant of the channel layer to induce stress in the channel layer. The devices may also include source/drain regions on respective first opposing sides of the channel structure and a gate on second opposing sides of the channel structure and between the source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.