Self-aligned structure

US9799560B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Stanley Seungchul Song · San Diego, US
• Jeffrey Junhao Xu · San Diego, US
• Kern Rim · Yorktown Heights, US
• Da Yang · San Diego, US
• John Jianhong Zhu · San Diego, US
• Junjing Bao · Fishkill, US
• Niladri Narayan Mojumder · San Diego, US
• Vladimir Machkaoutsan · Leuven, BE
• Mustafa Badaroglu · Kessel-Lo, BE
• Choh Fei Yeap · San Diego, US

Key dates

• Filing date: Sep 14, 2015
• Grant date: Oct 24, 2017
• Expiry date: Sep 14, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A fin-type semiconductor device includes a gate structure and a source/drain structure. The fin-type semiconductor device also includes a gate hardmask structure coupled to the gate structure. The gate hardmask structure comprises a first material. The fin-type semiconductor device further includes a source/drain hardmask structure coupled to the source/drain structure. The source/drain hardmask structure comprises a second material.