High acceptor level doping in silicon germanium
US9799736B1 · kind B1 · utility
398Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Jul 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gallium-doped sacrificial epitaxial or polycrystalline germanium layer is formed on a silicon germanium substrate having a high percentage of germanium followed by annealing to diffuse the gallium into the silicon germanium substrate. The germanium layer is selectively removed to expose the surface of a gallium-doped silicon germanium region within the silicon germanium substrate. The process has application to the formation of electrically conductive regions within integrated circuits such as source/drain regions and junctions without the introduction of carbon into such regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.