Methods for removing contamination from surfaces in substrate processing systems
US9805914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Jul 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.