Integrated circuit structure with refractory metal alignment marker and methods of forming same
US9806032B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Dec 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54453
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to integrated circuit (IC) structures and fabrication techniques. Methods according to the disclosure can include: providing a precursor structure including: a first inter-metal dielectric (IMD); a barrier dielectric positioned on the first IMD; forming an insulator on the barrier dielectric of the precursor structure, wherein an upper surface of the insulator includes a first trench and a second trench laterally separated from the first trench; forming an alignment marker over the precursor structure by filling the first trench with a first refractory metal film; forming a first metal-insulator-metal (MIM) electrode by filling the second trench with the first refractory metal film; recessing the insulator without exposing an upper surface of the barrier dielectric; forming a MIM dielectric layer on the insulator; and forming a second MIM electrode on the MIM dielectric layer, such that the second MIM electrode overlies a portion of the first MIM electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.