Memory element with a reactive metal layer

US9806130B2 · kind B2 · utility

Assignee

• UNITY SEMICONDUCTOR · US

Inventors

• Christophe J. Chevallier · Palo Alto, US
• Steve Kuo-Ren Hsia · San Jose, US
• Wayne Kinney · Emmett, US
• Steven W. Longcor · Mountain View, US
• Darrell Rinerson · Cupertino, US
• John Sanchez · Palo Alto, US
• Philip Swab · Santa Rosa, US
• Edmond R. Ward · Monte Sereno, US

Key dates

• Filing date: Dec 29, 2016
• Grant date: Oct 31, 2017
• Expiry date: Dec 29, 2036

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C2213/79
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.