Resistive memory device having sidewall spacer electrode and method of making thereof
US9806256B1 · kind B1 · utility
16Cited by
61References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Oct 21, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory device includes a first electrode, a sidewall spacer electrode located on a sidewall of a dielectric material contacting the first electrode, a resistive memory cell containing a resistive memory material and contacting the sidewall spacer electrode, and a second electrode containing the resistive memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.