Method and apparatus for filling a gap

US9812320B1 · kind B1 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Viljami Pore · Helsinki, FI
• Werner Knaepen · Leuven, BE
• Bert Jongbloed · Oud-Heverlee, BE
• Dieter Pierreux · Dilbeek, BE
• Steven R. A. Van Aerde · Tielt-Winge, BE
• Suvi Haukka · Helsinki, FI
• Atsuki Fukuzawa · Tama, JP
• Hideaki Fukuda · Hachioji, JP

Key dates

• Filing date: Jul 28, 2016
• Grant date: Nov 7, 2017
• Expiry date: Jul 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/334
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.