Semiconductor device and manufacturing method thereof
US9818639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2017 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Mar 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.