Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines
US9818640B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Sep 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a structure having a first hardmask layer, second hardmask layer and mandrel layer disposed respectively over a dielectric stack. An array of mandrels is patterned into the mandrel layer. A gamma trench is patterned into the second hardmask layer and between the mandrels. Self-aligned inner spacers are formed on sidewalls of the gamma trench, the inner spacers forming a portion of a pattern. The pattern is etched into the dielectric stack to form an array of alternating mandrel and non-mandrel metal lines extending in a Y direction and being self-aligned in a perpendicular X direction. The portion of the pattern formed by the inner spacers is utilized to form a pair of non-mandrel line cuts in a non-mandrel line. The non-mandrel line cuts are self-aligned in the Y direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.