Si precursors for deposition of SiN at low temperatures
US9824881B2 · kind B2 · utility
284Cited by
15References
25Claims
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.