Method for depositing metals free ald silicon nitride films using halide-based precursors
US9824884B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Oct 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.