Structure for radiofrequency applications and process for manufacturing such a structure
US9824915B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 14, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Sep 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a structure for radiofrequency applications comprising: a monocrystalline substrate, a polycrystalline silicon layer directly on the monocrystalline substrate, and an active layer on the polycrystalline silicon layer intended to receive radiofrequency components. At least a first portion of the polycrystalline silicon layer extending from an interface of the polycrystalline silicon layer with the monocrystalline substrate layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon layer at a concentration of between 2% and 20%. A process for manufacturing such a structure includes, during deposition of at least a first portion of such a polycrystalline silicon layer located at the interface with the monocrystalline substrate, depositing carbon and/or atoms in the at least a first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.