GaN transistors with polysilicon layers used for creating additional components
US9837438B2 · kind B2 · utility
6Cited by
44References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2015 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Jan 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN transistor with polysilicon layers for creating additional components for an integrated circuit and a method for manufacturing the same. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the polysilicon layers having one or more n-type regions and p-type regions. The device further includes metal interconnects disposed on the insulating material and vias disposed in the insulating material layer that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.