Gallium nitride semiconductor device with isolated fingers
US9842920B1 · kind B1 · utility
4Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Jul 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations of semiconductor devices may include: an isolated drain finger, a gate ring, and a source ring; wherein the gate ring surrounds a perimeter of the isolated drain finger; wherein the source ring surrounds an outer perimeter of the gate ring and the isolated drain finger; wherein a gate bus is coupled to the gate ring; wherein a first electrically insulative portion is located between the isolated drain finger and the gate ring; and wherein a second electrically insulative portion is located between the gate and the source ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.