Patent · US Active

Device including a metallization layer and method of manufacturing a device

US9844134B2 · kind B2 · utility

9Cited by

0References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Mischitz · Wernberg, AT
Markus Heinrici · Klagenfurt, AT
Stefan Schwab · Wien, AT

Key dates

Filing date	Jan 29, 2015
Grant date	Dec 12, 2017
Priority date	—
Expiry date	Aug 8, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH05K3/22
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A device comprises a base element and a metallization layer over the base element. The metallization layer comprises pores and has a varying degree of porosity, the degree of porosity being higher in a portion adjacent to the base element than in a portion remote from the base element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.