Semiconductor die singulation method
US9847219B2 · kind B2 · utility
2Cited by
10References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2016 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, semiconductor die are singulated from a semiconductor wafer having a layer of material by placing the semiconductor wafer onto a carrier tape with the layer of material adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the layer of material within the singulation lines, and separating portions of the layer of material using a fluid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.